首页> 外文OA文献 >Self-assembled arrays of ZnO nanoparticles and their application as varistor materialsElectronic supplementary information (ESI) available: XRD plots and FESEM images. See http://www.rsc.org/suppdata/jm/b4/b400927d/
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Self-assembled arrays of ZnO nanoparticles and their application as varistor materialsElectronic supplementary information (ESI) available: XRD plots and FESEM images. See http://www.rsc.org/suppdata/jm/b4/b400927d/

机译:ZnO纳米粒子的自组装阵列及其作为压敏电阻材料的应用可获得电子补充信息(ESI):XRD图和FESEM图像。参见http://www.rsc.org/suppdata/jm/b4/b400927d/

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摘要

Linear arrays of ZnO nanoparticles have been successfully prepared by a simple sol–gel condensation reactioninvolving chemical modifiers, followed by drying (80 uC) and calcination (500 uC). The calcined material (nanoarrayZnO) is composed of approximately spherical nanoparticles of average diameter 21 ¡ 3 nm, selfassembledto form arrays extending in length to 2–4 mm. The morphology of the ZnO is found to dependsensitively on the amounts of chemical modifiers present. In their absence the ZnO produced (nano-ZnO) is anunstructured agglomerate of nanoparticles. The mechanism for formation of these linear arrays has beeninvestigated by examining the intermediates formed at 80 uC and 250 uC using XRD and TEM and byfollowing the decomposition reactions using TGA and DSC. Varistors prepared from the nano-array ZnO bysintering (1050 uC) with appropriate mixtures of metal oxides showed a breakdown voltage of 786 ¡ 30 Vmm21, which is substantially higher than that of samples prepared under similar conditions from either micronsizedcommercial ZnO (507 ¡ 30 V mm21) or from nano-ZnO (683 ¡ 30 V mm21).
机译:ZnO纳米颗粒的线性阵列已通过简单的溶胶-凝胶缩合反应(涉及化学改性剂),然后干燥(80 uC)和煅烧(500 uC)成功制备。煅烧后的材料(纳米阵列ZnO)由平均直径为21〜3 nm的近似球形纳米颗粒组成,可自行组装形成长度为2-4 mm的阵列。发现ZnO的形态敏感地取决于存在的化学改性剂的量。在它们不存在的情况下,生成的ZnO(纳米ZnO)是纳米颗粒的无结构团聚体。通过使用XRD和TEM检查在80 uC和250 uC形成的中间体,以及通过TGA和DSC进行分解反应,研究了形成这些线性阵列的机理。由纳米阵列ZnO与适当的金属氧化物混合物烧结(1050 uC)制成的压敏电阻,其击穿电压为786℃30 Vmm21,大大高于在类似条件下由微米化商业ZnO制成的样品的击穿电压(507℃30 V mm21)或纳米ZnO(683¡30 V mm21)。

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